Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure

نویسندگان

چکیده

A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium (AlN/GaN) superlattice structure (SLS) in the growth of LED. The luminescence and crystalline properties LED were discussed. From photoluminescence (PL) surface mapping measurement, emission wavelength (453 nm) almost uniform across epi-wafer area. Temperaturedependent PL revealed that dominant peak 2.77 eV at all temperatures. related to quantum wells Some additional peaks also observed, particular lower These associated alloy fluctuations In0.11Ga0.89N/ In0.02Ga0.98N multiquantum (MQWs) Furthermore, dependence intensity decay time temperature evidence and/or interface wells. X-ray diffraction (XRD) ω-scan measurements, fringes AlN/GaN SLS clear, indicating with good abruptness. However, for MQWs less uniform, another MQWs. XRD-reciprocal (RSM) measurement showed epitaxial layers coherently, fully under strain.

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ژورنال

عنوان ژورنال: Journal of physical science

سال: 2021

ISSN: ['2180-4230', '1675-3402']

DOI: https://doi.org/10.21315/jps2021.32.3.1