Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure
نویسندگان
چکیده
A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium (AlN/GaN) superlattice structure (SLS) in the growth of LED. The luminescence and crystalline properties LED were discussed. From photoluminescence (PL) surface mapping measurement, emission wavelength (453 nm) almost uniform across epi-wafer area. Temperaturedependent PL revealed that dominant peak 2.77 eV at all temperatures. related to quantum wells Some additional peaks also observed, particular lower These associated alloy fluctuations In0.11Ga0.89N/ In0.02Ga0.98N multiquantum (MQWs) Furthermore, dependence intensity decay time temperature evidence and/or interface wells. X-ray diffraction (XRD) ω-scan measurements, fringes AlN/GaN SLS clear, indicating with good abruptness. However, for MQWs less uniform, another MQWs. XRD-reciprocal (RSM) measurement showed epitaxial layers coherently, fully under strain.
منابع مشابه
Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(111) substrate by pulsed-laser deposition
An epitaxial ZnO heterojunction light-emitting diode with an n-ZnO/MgO/TiN/n+-Si structure is produced by pulsed-laser deposition. By introducing a thin MgO/TiN buffer and a low temperature (LT) ZnO buffer, layer-by-layer growth of high quality ZnO epi-layer on Si(1 1 1) has been realized, which was confirmed by in situ reflection high-energy electron diffraction (RHEED), transmission electron ...
متن کاملPhotoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)
The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with pref...
متن کاملAspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate.
The Si nanopillars with high aspect ratio were fabricated by dry-etching the thin SiO(2)-covered Si substrate with a rapidly self-assembled Ni nanodot patterned mask. Aspect-ratio-dependent ultra-low reflection and anomalous luminescence of Si nanopillars are analyzed for applications in all-Si based lighting and energy transferring systems. The Si nanopillars induce an ultra-low reflectance an...
متن کاملsingle-step synthesis of multi-component spirobarbiturates using ionic liquids and synthesis of substituted pyridine filled with catalysts supported on solid substrate
in this thesis, a better reaction conditions for the synthesis of spirobarbiturates catalyzed by task-specific ionic liquid (2-hydroxy-n-(2-hydroxyethyl)-n,n-dimethylethanaminium formate), calcium hypochlorite ca(ocl)2 or n-bromosuccinimide (nbs) in the presence of water at room temperature by ultrasonic technique is provided. the design and synthesis of spirocycles is a challenging task becaus...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of physical science
سال: 2021
ISSN: ['2180-4230', '1675-3402']
DOI: https://doi.org/10.21315/jps2021.32.3.1